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2SB1261 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

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DELI ELECTRONICS TECHNOLOGY CO.,LTD

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Brand Name : NEC

Model Number : 2SB1261

Place of Origin : CHINA

MOQ : 10 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 10000PCS

Delivery Time : STOCK

Packaging Details : BAG

Collector-Base Voltage : -60V

Collector-Emitter Voltage : -60V

Emitter-Base Voltage : -7V

Collector Current-Continuous : -3A

Collector Power Dissipation @TC=25℃ : 10W

Junction Temperature : 150℃

Storage Temperature : -55~150℃

PACKAGE : TO126

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2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors

DESCRIPTION

·Low Collector Saturation Voltage

·High Power Dissipation- : PC= 10W(Max)@TC=25℃

·Complement to Type 2SD1899-K

APPLICATIONS

·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

Product Tags:

resistor equipped transistor

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